Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1
- N° de stock RS:
- 220-7437
- Référence fabricant:
- IPN60R600P7SATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
12,98 €
(TVA exclue)
15,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 940 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,649 € | 12,98 € |
| 100 - 180 | 0,617 € | 12,34 € |
| 200 - 480 | 0,59 € | 11,80 € |
| 500 - 980 | 0,565 € | 11,30 € |
| 1000 + | 0,454 € | 9,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7437
- Référence fabricant:
- IPN60R600P7SATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
The Infineon Cool MOS P7 super junction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes Cool MOS P7 in SOT-223 a perfect fit for its target applications. The 700V and 800V Cool MOS P7 are optimized for fly back topologies. 600V Cool MOS P7 SJ MOSFET is suitable for hard as well as so switching topologies (Fly back, PFC and LLC).
Ease of use and fast design-in through low ringing tendency and usage
across PFC and PWM stages
Simplified thermal management due to low switching and conduction
losses
Increased power density solutions enabled by using product swith
smaller foot print and higher manufacturing quality due to>2kVESD
protection
Suitable for awide variety of applications and power ranges
Liens connexes
- Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode 650 V, 3-Pin SOT-223 IPN60R600P7SATMA1
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- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R360P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R600P7SATMA1