Infineon CoolMOS P7 Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin SOT-223

Sous-total (1 bobine de 3000 unités)*

1 203,00 €

(TVA exclue)

1 455,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
3000 +0,401 €1 203,00 €

*Prix donné à titre indicatif

N° de stock RS:
219-6000
Référence fabricant:
IPN80R750P7ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS P7

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

7.2W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.7mm

Width

3.7 mm

Height

1.8mm

Automotive Standard

No

The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

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