Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1
- N° de stock RS:
- 219-6005
- Référence fabricant:
- IPN95R1K2P7ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
9,64 €
(TVA exclue)
11,66 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 870 unité(s) expédiée(s) à partir du 31 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,964 € | 9,64 € |
| 50 - 90 | 0,916 € | 9,16 € |
| 100 - 240 | 0,877 € | 8,77 € |
| 250 - 490 | 0,839 € | 8,39 € |
| 500 + | 0,78 € | 7,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6005
- Référence fabricant:
- IPN95R1K2P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Liens connexes
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