Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin SOT-223
- N° de stock RS:
- 219-6004
- Référence fabricant:
- IPN95R1K2P7ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
1 185,00 €
(TVA exclue)
1 434,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,395 € | 1 185,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6004
- Référence fabricant:
- IPN95R1K2P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 7W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 7W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Automotive Standard No | ||
The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Liens connexes
- Infineon CoolMOS™ P7 N-Channel MOSFET 950 V, 3-Pin SOT-223 IPN95R1K2P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R900P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R2K0P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R750P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R360P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R600P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R4K5P7ATMA1