Infineon CoolMOS P7 N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1

Offre groupée disponible
Consulter les options de prix de gros

Sous-total (1 bobine de 3000 unités)*

795,00 €

(TVA exclue)

963,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 29 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité
Prix par unité
la bobine*
3000 - 30000,265 €795,00 €
6000 +0,252 €756,00 €

*Prix donné à titre indicatif

N° de stock RS:
220-7436
Référence fabricant:
IPN60R600P7SATMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

MOSFET & Diode

Channel Type

N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS P7

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

7W

Typical Gate Charge Qg @ Vgs

9nC

Forward Voltage Vf

900mV

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

+150°C

Width

3.7mm

Length

6.7mm

Standards/Approvals

No

Height

1.8mm

Automotive Standard

No

Infineon CoolMOS P7 Series MOSFET & Diode, 650V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - IPN60R600P7SATMA1


This MOSFET & diode module combines a high-voltage N-channel switching transistor with an integrated diode for use in power conversion and switching applications. It is designed for surface-mount assembly in a SOT-223 package and operates across a wide ambient range, supporting demanding thermal environments and continuous current delivery for industrial power stages and converters.

Features and Benefits:


• 650V drain rating enables high-voltage switching applications
• 16A continuous drain current supports sustained load operation
• 600mΩ Rds(on) minimises conduction losses during switching
• 9nC typical gate charge reduces drive energy requirements
• 7W maximum power dissipation allows significant thermal load handling
• 0.9V forward diode voltage lowers conduction drop in freewheeling use

Applications


• Suitable for high-voltage offline power supplies
• Ideal for switch-mode power converters requiring surface mount
• Used for synchronous rectification in mixed-topology designs
• Can be used for industrial motor drive intermediate stages
• Suitable for DC-DC converters with elevated operating temperatures

What gate voltage range is safe for driving the device?


The device accepts up to 20V between gate and source for normal operation.

What temperature extremes can it withstand during use?


It is rated to operate from −40°C up to +150°C ambient.

How many pins does the package present for PCB layout?


The component is supplied with three electrical connections suitable for SOT-223 footprints.

What is the channel type and conduction mode of the transistor?


It uses an N-type channel and operates in enhancement mode.

What mounting style is required for assembly onto a board?


It is intended for surface-mount installation in a SOT-223 package.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.