Infineon CoolMOS P7 N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223
- N° de stock RS:
- 220-7436
- Référence fabricant:
- IPN60R600P7SATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
795,00 €
(TVA exclue)
963,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,265 € | 795,00 € |
| 6000 + | 0,252 € | 756,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7436
- Référence fabricant:
- IPN60R600P7SATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 7W | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | +150°C | |
| Height | 1.8mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 7W | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature +150°C | ||
Height 1.8mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
The Infineon Cool MOS P7 super junction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes Cool MOS P7 in SOT-223 a perfect fit for its target applications. The 700V and 800V Cool MOS P7 are optimized for fly back topologies. 600V Cool MOS P7 SJ MOSFET is suitable for hard as well as so switching topologies (Fly back, PFC and LLC).
Ease of use and fast design-in through low ringing tendency and usage
across PFC and PWM stages
Simplified thermal management due to low switching and conduction
losses
Increased power density solutions enabled by using product swith
smaller foot print and higher manufacturing quality due to>2kVESD
protection
Suitable for awide variety of applications and power ranges
Liens connexes
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