Infineon OptiMOS N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2
- N° de stock RS:
- 220-7403
- Référence fabricant:
- IPD30N06S4L23ATMA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 2500 unités)*
870,00 €
(TVA exclue)
1 052,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 21 décembre 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 - 2500 | 0,348 € | 870,00 € |
| 5000 + | 0,331 € | 827,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7403
- Référence fabricant:
- IPD30N06S4L23ATMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.1nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 36W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.1nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET & Diode, 60V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N06S4L23ATMA2
This MOSFET & diode is a power switching device designed for high-current applications in demanding electrical environments. It is an N-channel enhancement-mode transistor with an integrated diode, intended for surface-mount deployment in systems requiring robust conduction and thermal tolerance. The component operates across an extended temperature span and is built to meet automotive stress requirements for use in vehicle electronics and industrial controls.
Features and Benefits:
• 60 V rating enables switching of moderate-voltage power rails
• 30 A continuous drain current supports high-current loads
• 23 mΩ Rds(on) minimises conduction losses under load
• 36 W power dissipation allows sustained power handling
• 16.1 nC typical gate charge provides predictable switching behaviour
• 1.3 V forward voltage for efficient diode conduction
• 30 A continuous drain current supports high-current loads
• 23 mΩ Rds(on) minimises conduction losses under load
• 36 W power dissipation allows sustained power handling
• 16.1 nC typical gate charge provides predictable switching behaviour
• 1.3 V forward voltage for efficient diode conduction
Applications
• Suitable for automotive power management modules
• Ideal for DC motor drive stages in vehicles
• Used with high-current converters and regulators
• Can be used for load switching in industrial equipment
• Suitable for surface-mount assemblies requiring thermal endurance
• Ideal for DC motor drive stages in vehicles
• Used with high-current converters and regulators
• Can be used for load switching in industrial equipment
• Suitable for surface-mount assemblies requiring thermal endurance
What gate voltage limits must be observed during use?
The device must not be driven beyond ±16 V gate-to-source to prevent gate stress.
What package and mounting style does the component use?
It is supplied in a TO-252 package intended for surface mounting with three pins.
How does the device behave across temperature extremes?
It is specified to operate from −55 °C up to 175 °C for use in wide-temperature environments.
What channel conduction type is implemented and how does it affect activation?
It uses an N-channel enhancement mode, so a positive gate voltage relative to the source is required to turn it on.
Liens connexes
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