Infineon CoolMOS P7 SJ Type N-Channel MOSFET, 2 A, 950 V Enhancement, 3-Pin TO-251

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Sous-total (1 tube de 75 unités)*

36,225 €

(TVA exclue)

43,80 €

(TVA incluse)

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Unité
Prix par unité
le tube*
75 +0,483 €36,23 €

*Prix donné à titre indicatif

N° de stock RS:
219-6014
Référence fabricant:
IPU95R3K7P7AKMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

950V

Package Type

TO-251

Series

CoolMOS P7 SJ

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

370mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

22W

Maximum Operating Temperature

150°C

Width

6.22 mm

Height

2.41mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

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