Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1

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Sous-total (1 paquet de 10 unités)*

10,46 €

(TVA exclue)

12,66 €

(TVA incluse)

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  • Plus 140 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité
Prix par unité
le paquet*
10 - 401,046 €10,46 €
50 - 900,995 €9,95 €
100 - 2400,952 €9,52 €
250 - 4900,91 €9,10 €
500 +0,848 €8,48 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
219-5991
Référence fabricant:
IPA95R1K2P7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

950V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

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