Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1
- N° de stock RS:
- 219-5995
- Référence fabricant:
- IPD95R2K0P7ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 15 unités)*
14,66 €
(TVA exclue)
17,73 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 7 320 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 15 - 60 | 0,977 € | 14,66 € |
| 75 - 135 | 0,927 € | 13,91 € |
| 150 - 360 | 0,888 € | 13,32 € |
| 375 - 735 | 0,849 € | 12,74 € |
| 750 + | 0,791 € | 11,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-5995
- Référence fabricant:
- IPD95R2K0P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-252 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 37W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-252 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 37W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 950V Drain Source Voltage, 4A Continuous Drain Current - IPD95R2K0P7ATMA1
This MOSFET is a high-voltage N-channel enhancement transistor designed for switching and power conversion in demanding electronic systems. It operates across a wide ambient range and is intended for surface-mounted applications where a compact, thermally capable switching device is required.
Features and Benefits:
• 950V drain-source rating enables high-voltage switching applications
• 2mΩ Rds(on) minimises conduction losses during high-current operation
• 10nC gate charge reduces drive energy and switching-related losses
• 4A continuous drain current supports moderate load currents reliably
• 37W maximum power dissipation allows significant thermal headroom
• 20V gate-source capability accommodates common gate drive voltages
• 2mΩ Rds(on) minimises conduction losses during high-current operation
• 10nC gate charge reduces drive energy and switching-related losses
• 4A continuous drain current supports moderate load currents reliably
• 37W maximum power dissipation allows significant thermal headroom
• 20V gate-source capability accommodates common gate drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power supply primary switches
• Used with industrial motor-drive front-ends
• Can be used for energy conversion in renewable systems
• Suitable for Compact surface-mount power modules
• Ideal for switch-mode power supply primary switches
• Used with industrial motor-drive front-ends
• Can be used for energy conversion in renewable systems
• Suitable for Compact surface-mount power modules
What temperature extremes can it tolerate in operation?
It is rated to operate from −55°C up to 150°C, enabling use in wide thermal envelopes.
How is it packaged for PCB assembly?
It comes in a TO-252 surface-mount package suitable for soldered board mounting.
What forward conduction characteristic is typical when conducting?
The device exhibits a forward voltage of 0.9V during conduction under appropriate conditions.
How many electrical connections does it present for circuit integration?
It provides three pins for standard MOSFET Terminal connections.
Liens connexes
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