Infineon 600V CoolMOS P7 N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1

N° de stock RS:: 218-3050
Référence fabricant:: IPD60R280P7SAUMA1
Fabricant:: Infineon

Infineon 600V CoolMOS P7 N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1

Sous-total (1 bobine de 2500 unités)*

1 080,00 €

(TVA exclue)

1 307,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 04 janvier 2027

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Unité	Prix par unité	la bobine*
2500 +	0,432 €	1 080,00 €

*Prix donné à titre indicatif

N° de stock RS:: 218-3050
Référence fabricant:: IPD60R280P7SAUMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	600V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Power Dissipation Pd	53W
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Width	6.22mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series 600V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Power Dissipation Pd 53W
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Width 6.22mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD60R280P7SAUMA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - IPD60R280P7SAUMA1

This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications where robust voltage handling and elevated operating temperatures are required. It functions as an enhancement-mode transistor suitable for switching and power conversion tasks, offering controlled gate-driven conduction and support for continuous drain currents typical in industrial and power-electronics environments.

Features and Benefits:

• 600 V maximum drain-source voltage enables high-voltage switching
• 12 A continuous drain current supports significant load currents
• 280 mΩ maximum RDS(on) reduces conduction losses under load
• 53 W maximum power dissipation maintains thermal margin in operation
• 18 nC typical gate charge at VGS permits fast switching transitions
• −40 °C to 150 °C operating range allows high-temperature deployment

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power supply primary switches
• Used with motor drives requiring 600 V rated devices
• Can be used for industrial power-switching modules
• Suitable for Compact surface-mount power assemblies

What gate voltage limits must be observed for safe operation?

The device must not exceed a gate-source voltage of 20 V to avoid gate overstress.

How does the package format affect mounting and the thermal path?

The TO-252 surface-mount package provides a Compact footprint and a direct thermal path through the tab for PCB heat-sinking arrangements.

What type of conduction mode does it employ and what does that imply?

It operates in enhancement mode as an N-channel device, so it requires a positive gate drive relative to the source to turn on.

What is the typical gate-charge behaviour relevant for drive design?

The typical gate charge of 18 nC at VGS indicates the gate driver must supply that charge per switching event, influencing driver sizing and switching losses.