Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

N° de stock RS:: 214-4387
Référence fabricant:: IPD60R360P7ATMA1
Fabricant:: Infineon

Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

Sous-total (1 bobine de 2500 unités)*

1 105,00 €

(TVA exclue)

1 337,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 11 décembre 2026

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Unité	Prix par unité	la bobine*
2500 +	0,442 €	1 105,00 €

*Prix donné à titre indicatif

N° de stock RS:: 214-4387
Référence fabricant:: IPD60R360P7ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	600V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	13nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	41W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	2.35mm
	Length	6.65mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series 600V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 13nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 41W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 2.35mm
	Length 6.65mm
	Automotive Standard No

Datasheet - IPD60R360P7ATMA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 9A Continuous Drain Current - IPD60R360P7ATMA1

This MOSFET is a high-voltage N-channel switching transistor designed for surface-mounted power conversion and switching applications. It operates across a wide temperature span suitable for demanding environments and is intended to handle high drain-to-source voltages while providing controlled conduction and switching behaviour in power supplies and related circuits.

Features and Benefits:

• 600V maximum drain-to-source voltage enables high-voltage designs
• 9A continuous drain current supports substantial load capability
• 360mΩ Rds(on) limits conduction losses at operating currents
• 13nC typical gate charge reduces switching energy and stress
• 20V maximum gate-to-source withstands robust drive margins
• 41W power dissipation allows significant thermal loading

Applications

• Suitable for offline switch-mode power supplies
• Ideal for high-voltage DC-DC converters
• Used with bridge and clamped switching topologies
• Can be used for industrial motor-drive front ends
• Appropriate for telecom power distribution modules

What packaging and mounting considerations should I plan for?

It is supplied in a TO-252 package intended for surface-mount assembly

ensure an appropriate land pattern and thermal vias if board-level heat spreading is required.

How does thermal range affect deployment?

The device is specified to operate from -55°C up to 150°C so it can be used in environments with extreme temperature variations without derating for ambient extremes within that range.

What gate-drive constraints apply during layout?

Keep gate leads short to minimise inductance given the 13nC gate charge and respect the ±20V gate-to-source absolute limit during drive and transient conditions.

How should I assess current capability in my design?

Use the 9A continuous drain current rating as a baseline and verify system-level thermal resistance and cooling to maintain junction temperatures within the specified limits.