Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251
- N° de stock RS:
- 217-2576
- Référence fabricant:
- IPS60R3K4CEAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 75 unités)*
12,00 €
(TVA exclue)
14,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 825 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 0,16 € | 12,00 € |
| 150 - 300 | 0,149 € | 11,18 € |
| 375 - 675 | 0,145 € | 10,88 € |
| 750 - 1800 | 0,141 € | 10,58 € |
| 1875 + | 0,138 € | 10,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2576
- Référence fabricant:
- IPS60R3K4CEAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-251 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.82mm | |
| Width | 2.4 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-251 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.82mm | ||
Width 2.4 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Liens connexes
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