Infineon CoolMOS CE Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-251 IPS60R800CEAKMA1
- N° de stock RS:
- 214-9103
- Référence fabricant:
- IPS60R800CEAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
16,875 €
(TVA exclue)
20,425 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 250 unité(s) expédiée(s) à partir du 19 février 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,675 € | 16,88 € |
| 125 - 225 | 0,526 € | 13,15 € |
| 250 - 600 | 0,493 € | 12,33 € |
| 625 - 1225 | 0,459 € | 11,48 € |
| 1250 + | 0,425 € | 10,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9103
- Référence fabricant:
- IPS60R800CEAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-251 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 17.2nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.4 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-251 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 17.2nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.4 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications
Liens connexes
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