Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251
- N° de stock RS:
- 222-4712
- Référence fabricant:
- IPSA70R600P7SAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 75 unités)*
56,625 €
(TVA exclue)
68,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 0,755 € | 56,63 € |
| 150 - 300 | 0,589 € | 44,18 € |
| 375 - 675 | 0,551 € | 41,33 € |
| 750 - 1800 | 0,513 € | 38,48 € |
| 1875 + | 0,475 € | 35,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4712
- Référence fabricant:
- IPSA70R600P7SAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 43.1W | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.38 mm | |
| Height | 6.1mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 43.1W | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 2.38 mm | ||
Height 6.1mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Liens connexes
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