Infineon HEXFET Type N, Type N-Channel MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-263 IRFZ44ESTRLPBF

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N° de stock RS:
215-2605
Référence fabricant:
IRFZ44ESTRLPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface, Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

60nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon series fifth generation HEXFET from International rectifier utilize Advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

Advanced Process Technology

Fully avalanche rated

Fast switching

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