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Infineon HEXFET N-Channel Power MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-220AB

N° de stock RS:: 919-4937
Référence fabricant:: IRFZ44EPBF
Fabricant:: Infineon

Infineon HEXFET N-Channel Power MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-220AB

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Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.

N° de stock RS:: 919-4937
Référence fabricant:: IRFZ44EPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Series	HEXFET
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current (Id)	48 A
	Maximum Drain Source Voltage (Vds)	60 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-220AB
	Automotive Standard	No
	Forward Voltage (Vf)	1.3 V
	Height	8.77 mm
	Length	10.54 mm
	Maximum Drain Source Resistance (Rds)	0.023 Ω
	Maximum Gate Source Voltage (Vgs)	-20 V, +20 V
	Maximum Operating Temperature	175 °C
	Maximum Power Dissipation (Pd)	110 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole
	Standards/Approvals	ANSI Y14.5M, JEDEC TO-220AB
	Typical Gate Charge (Qg) @ Vgs	60 nC
	Width	4.69 mm

	Sélectionner tout
	Marque Infineon
	Series HEXFET
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current (Id) 48 A
	Maximum Drain Source Voltage (Vds) 60 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-220AB
	Automotive Standard No
	Forward Voltage (Vf) 1.3 V
	Height 8.77 mm
	Length 10.54 mm
	Maximum Drain Source Resistance (Rds) 0.023 Ω
	Maximum Gate Source Voltage (Vgs) -20 V, +20 V
	Maximum Operating Temperature 175 °C
	Maximum Power Dissipation (Pd) 110 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole
	Standards/Approvals ANSI Y14.5M, JEDEC TO-220AB
	Typical Gate Charge (Qg) @ Vgs 60 nC
	Width 4.69 mm

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF

This MOSFET features an N-channel configuration, making it suitable for industrial and automation applications. It supports high continuous drain current, which is advantageous for power applications. Designed for enhanced efficiency, it is Ideal for electric and electronic systems where quick switching and durability are necessary.

Features & Benefits

• Continuous drain current capability up to 48A for effective operation

• Operates at a drain-source voltage of 60V for power management

• Low Rds(on) improves efficiency and reduces power loss

• Packaged in TO-220AB for straightforward installation and heat dissipation

• Fully avalanche rated, ensuring reliability under stress conditions

Applications

• Power supply circuits for increased efficiency

• Motor control in automation tasks

• DC-DC converters for voltage regulation

• High-performance battery management systems

• Electronic switching devices for enhanced control

What is the maximum gate-to-source voltage for safe operation?

The maximum gate-to-source voltage is ±20V, ensuring proper functionality and safety during operation.

How can this component be effectively mounted?

It is designed for through-hole mounting, facilitating a robust attachment to PCB layouts or heatsinks.

What happens if the device exceeds its maximum junction temperature?

Exceeding the maximum junction temperature of 175°C can result in thermal damage; therefore, proper cooling management is essential.

Can this be used in high-speed switching applications?

Yes, it supports fast switching capabilities, making it suitable for applications requiring Rapid signal processing.

What is the typical power dissipation capability at room temperature?

At 25°C, it can dissipate up to 110W, allowing it to handle substantial power flow without overheating.

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