Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 215-2479
- Référence fabricant:
- IPA60R360P7SXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
40,25 €
(TVA exclue)
48,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 3 600 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,805 € | 40,25 € |
| 100 - 200 | 0,755 € | 37,75 € |
| 250 - 450 | 0,746 € | 37,30 € |
| 500 - 950 | 0,737 € | 36,85 € |
| 1000 + | 0,728 € | 36,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2479
- Référence fabricant:
- IPA60R360P7SXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 22W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 22W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 9A Continuous Drain Current - IPA60R360P7SXKSA1
This MOSFET is a high-voltage switching transistor designed for power-conversion roles in demanding electronic systems. It operates across a wide temperature span and is built for through-hole mounting in conventional assembly workflows, providing a compact solution for circuits that require a robust N-channel enhancement device with a high drain-to-source voltage rating.
Features and Benefits:
• 600V drain tolerance enables high-voltage switching applications
• 9A continuous drain current supports medium-power loads
• 360mΩ Rds(on) reduces conduction losses at operating current
• 22W power dissipation allows sustained thermal loading
• 13nC typical gate charge ensures efficient drive requirements
• 0.9V forward voltage minimises diode conduction drop
• 9A continuous drain current supports medium-power loads
• 360mΩ Rds(on) reduces conduction losses at operating current
• 22W power dissipation allows sustained thermal loading
• 13nC typical gate charge ensures efficient drive requirements
• 0.9V forward voltage minimises diode conduction drop
Applications
• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion topologies
• Used for hard‑switching in inverter stages
• Can be used for mains-side power factor correction
• Used with heat-sinked assemblies in power modules
• Ideal for switch-mode power conversion topologies
• Used for hard‑switching in inverter stages
• Can be used for mains-side power factor correction
• Used with heat-sinked assemblies in power modules
What package and mounting method does it use?
It is supplied in a TO-220 package and intended for through-hole mounting to provide secure mechanical and thermal connection.
What gate and thermal limits must a designer observe?
The gate may be driven up to 20V relative to source and the device should be cooled to handle up to 22W dissipation within its operating temperature range.
What temperature range can it tolerate during operation?
It is rated to operate across a low of -55°C up to a high of 150°C for a wide variety of thermal environments.
What conduction mode and channel type are provided?
The component is an N-channel enhancement-mode device suited to standard transistor switching topologies.
Liens connexes
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