Infineon OptiMOS Type N-Channel MOSFET, 95 A, 80 V Enhancement, 8-Pin SuperSO BSC052N08NS5ATMA1
- N° de stock RS:
- 215-2461
- Référence fabricant:
- BSC052N08NS5ATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
11,90 €
(TVA exclue)
14,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 1,19 € | 11,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2461
- Référence fabricant:
- BSC052N08NS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SuperSO | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SuperSO | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 80V Maximum Drain Source Voltage, 95A Maximum Continuous Drain Current - BSC052N08NS5ATMA1
This MOSFET is a surface-mount N-channel enhancement-mode transistor designed for high-current switching in power electronics. It is intended for applications requiring efficient conduction and fast switching across a wide ambient range, and is supplied in an 8-pin SuperSO package suitable for compact board layouts.
Features and Benefits:
• Very low on-resistance 5.2mΩ enabling reduced conduction losses
• High continuous drain current 95A permitting elevated load handling
• 80V drain-source rating supporting medium-voltage designs
• 83W maximum power dissipation allowing sustained thermal load
• Typical gate charge 32nC for faster switching transitions
• Gate-source tolerance 20V to accommodate robust drive voltages
• High continuous drain current 95A permitting elevated load handling
• 80V drain-source rating supporting medium-voltage designs
• 83W maximum power dissipation allowing sustained thermal load
• Typical gate charge 32nC for faster switching transitions
• Gate-source tolerance 20V to accommodate robust drive voltages
Applications
• Suitable for high-efficiency DC-DC converters in power rails
• Ideal for synchronous rectification in power-supply stages
• Used for motor-drive half-bridge and inverter switching
• Can be used for server and telecoms power-distribution modules
• Employed in industrial switching where a wide temperature range is required
• Ideal for synchronous rectification in power-supply stages
• Used for motor-drive half-bridge and inverter switching
• Can be used for server and telecoms power-distribution modules
• Employed in industrial switching where a wide temperature range is required
What temperature extremes can the device tolerate during operation?
It is specified to operate from -55°C up to 150°C, allowing use in demanding thermal environments.
Which mounting method and package should I allow for on the board?
The device is supplied as a surface-mounted 8-pin SuperSO package, so the layout should accommodate the thermal pad and SMD land pattern.
How does the transistor behave when driven with stronger gate voltages?
The gate-source maximum is 20V
within that limit higher drive voltages reduce RDS(on) and improve conduction performance.
What switching characteristic impacts layout for high-frequency designs?
A typical gate charge of 32nC determines gate-drive energy and influences drive circuitry and EMI mitigation strategies.
Liens connexes
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