Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SuperSO

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Sous-total (1 bobine de 5000 unités)*

1 510,00 €

(TVA exclue)

1 825,00 €

(TVA incluse)

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Dernier stock RS
  • 10 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
la bobine*
5000 +0,302 €1 510,00 €

*Prix donné à titre indicatif

N° de stock RS:
215-2458
Référence fabricant:
BSC034N03LSGATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SuperSO

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

63W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS™3 Power-MOSFET series has 30V maximum drain source voltage with SuperSO8 5x6 package type. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half bridge configuration (power stage 5x6).

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel; Logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Superior thermal resistance

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