Infineon OptiMOS Type N-Channel MOSFET, 47 A, 60 V Enhancement, 8-Pin SuperSO

Sous-total (1 bobine de 5000 unités)*

1 750,00 €

(TVA exclue)

2 100,00 €

(TVA incluse)

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Prix par unité
la bobine*
5000 +0,35 €1 750,00 €

*Prix donné à titre indicatif

N° de stock RS:
215-2464
Référence fabricant:
BSC094N06LS5ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

60V

Package Type

SuperSO

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

9.4nC

Maximum Power Dissipation Pd

36W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - BSC094N06LS5ATMA1


This MOSFET is an N-channel enhancement-mode transistor intended for high-current switching in surface-mounted assemblies. It operates across a wide temperature range for demanding environments and suits power-conversion roles where a moderate drain-source voltage rating and low conduction losses are required.

Features and Benefits:


• 60V drain rating enables mid-voltage power switching
• 47A continuous current supports high-load applications
• 13.4mΩ Rds(on) reduces conduction power loss
• 36W maximum dissipation permits substantial power handling
• 9.4nC typical gate charge optimises switching energy
• 20V gate tolerance allows flexible drive voltages

Applications


• Suitable for synchronous buck regulator stages
• Ideal for motor-driver half-bridge assemblies
• Used in server power-management front ends
• Can be used for battery protection and distribution
• Suitable for high-current DC-DC converters

What temperature extremes can it withstand during operation?


It functions over a wide thermal range from -55°C up to 150°C, allowing use in both cold-start and elevated-temperature environments.

How is it physically packaged for assembly?


The device is supplied in a SuperSO surface-mount package with eight pins for PCB mounting and automated assembly.

What switching behaviour can designers expect during gate drive?


With a typical gate charge of 9.4nC, it offers a balance between switching speed and drive energy, enabling efficient transitions when driven from common gate drivers.

Is the device optimised for low-voltage drop in conduction?


Yes

the low drain-source resistance of 13.4mΩ minimises voltage drop under load, reducing heat generation during continuous operation.

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