Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SuperSO BSC034N03LSGATMA1
- N° de stock RS:
- 215-2459
- Référence fabricant:
- BSC034N03LSGATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
9,60 €
(TVA exclue)
11,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 14 960 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,48 € | 9,60 € |
| 100 - 180 | 0,456 € | 9,12 € |
| 200 - 480 | 0,437 € | 8,74 € |
| 500 - 980 | 0,418 € | 8,36 € |
| 1000 + | 0,389 € | 7,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2459
- Référence fabricant:
- BSC034N03LSGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™3 Power-MOSFET series has 30V maximum drain source voltage with SuperSO8 5x6 package type. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half bridge configuration (power stage 5x6).
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel; Logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Superior thermal resistance
Liens connexes
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