Infineon OptiMOS N-Channel MOSFET, 47 A, 60 V Enhancement, 8-Pin SuperSO BSC094N06LS5ATMA1
- N° de stock RS:
- 215-2465
- Référence fabricant:
- BSC094N06LS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
14,14 €
(TVA exclue)
17,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,707 € | 14,14 € |
| 100 - 180 | 0,671 € | 13,42 € |
| 200 - 480 | 0,643 € | 12,86 € |
| 500 - 980 | 0,615 € | 12,30 € |
| 1000 + | 0,573 € | 11,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2465
- Référence fabricant:
- BSC094N06LS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - BSC094N06LS5ATMA1
This MOSFET is an N-channel enhancement-mode transistor intended for high-current switching in surface-mounted assemblies. It operates across a wide temperature range for demanding environments and suits power-conversion roles where a moderate drain-source voltage rating and low conduction losses are required.
Features and Benefits:
• 60V drain rating enables mid-voltage power switching
• 47A continuous current supports high-load applications
• 13.4mΩ Rds(on) reduces conduction power loss
• 36W maximum dissipation permits substantial power handling
• 9.4nC typical gate charge optimises switching energy
• 20V gate tolerance allows flexible drive voltages
• 47A continuous current supports high-load applications
• 13.4mΩ Rds(on) reduces conduction power loss
• 36W maximum dissipation permits substantial power handling
• 9.4nC typical gate charge optimises switching energy
• 20V gate tolerance allows flexible drive voltages
Applications
• Suitable for synchronous buck regulator stages
• Ideal for motor-driver half-bridge assemblies
• Used in server power-management front ends
• Can be used for battery protection and distribution
• Suitable for high-current DC-DC converters
• Ideal for motor-driver half-bridge assemblies
• Used in server power-management front ends
• Can be used for battery protection and distribution
• Suitable for high-current DC-DC converters
What temperature extremes can it withstand during operation?
It functions over a wide thermal range from -55°C up to 150°C, allowing use in both cold-start and elevated-temperature environments.
How is it physically packaged for assembly?
The device is supplied in a SuperSO surface-mount package with eight pins for PCB mounting and automated assembly.
What switching behaviour can designers expect during gate drive?
With a typical gate charge of 9.4nC, it offers a balance between switching speed and drive energy, enabling efficient transitions when driven from common gate drivers.
Is the device optimised for low-voltage drop in conduction?
Yes
the low drain-source resistance of 13.4mΩ minimises voltage drop under load, reducing heat generation during continuous operation.
Liens connexes
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