Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON
- N° de stock RS:
- 220-7430
- Référence fabricant:
- IPL60R095CFD7AUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
5 970,00 €
(TVA exclue)
7 230,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 3 000 unité(s) expédiée(s) à partir du 14 mai 2026
- Plus 3 000 unité(s) expédiée(s) à partir du 21 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,99 € | 5 970,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7430
- Référence fabricant:
- IPL60R095CFD7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 147W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 147W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
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