Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1
- N° de stock RS:
- 214-8977
- Référence fabricant:
- BSC0910NDIATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
11,63 €
(TVA exclue)
14,07 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,163 € | 11,63 € |
| 50 - 90 | 1,105 € | 11,05 € |
| 100 - 240 | 1,081 € | 10,81 € |
| 250 - 490 | 1,012 € | 10,12 € |
| 500 + | 0,942 € | 9,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-8977
- Référence fabricant:
- BSC0910NDIATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | TISON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.87V | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 5mm | |
| Height | 1.1mm | |
| Width | 6 mm | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type TISON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.87V | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 5mm | ||
Height 1.1mm | ||
Width 6 mm | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The Dual N-channel OptiMOS MOSFETs, comes Halogen-free according to IEC61249-2-21 and Pb-free lead plating; RoHS compliant.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
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