Infineon OptiMOS 5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin TO-220 IPP076N15N5AKSA1
- N° de stock RS:
- 214-4409
- Référence fabricant:
- IPP076N15N5AKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
19,53 €
(TVA exclue)
23,63 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 30 unité(s) expédiée(s) à partir du 31 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 3,906 € | 19,53 € |
| 25 - 45 | 3,476 € | 17,38 € |
| 50 - 120 | 3,24 € | 16,20 € |
| 125 - 245 | 3,044 € | 15,22 € |
| 250 + | 2,814 € | 14,07 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-4409
- Référence fabricant:
- IPP076N15N5AKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 15.93 mm | |
| Length | 10.2mm | |
| Height | 4.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 15.93 mm | ||
Length 10.2mm | ||
Height 4.4mm | ||
Automotive Standard No | ||
The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Liens connexes
- Infineon OptiMOS™ 5 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP076N15N5AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP200N15N3GXKSA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 150 V, 3-Pin TO-220 IPP051N15N5AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1
- Infineon OptiMOS™ N-Channel MOSFET BSC010N04LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1