Infineon OptiMOS 3 N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220 IPP111N15N3GXKSA1

N° de stock RS:: 165-8120
Référence fabricant:: IPP111N15N3GXKSA1
Fabricant:: Infineon

Infineon OptiMOS 3 N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220 IPP111N15N3GXKSA1

Sous-total (1 tube de 50 unités)*

127,20 €

(TVA exclue)

153,90 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 250 unité(s) expédiée(s) à partir du 21 septembre 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le tube*
50 +	2,544 €	127,20 €

*Prix donné à titre indicatif

N° de stock RS:: 165-8120
Référence fabricant:: IPP111N15N3GXKSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	83A
	Maximum Drain Source Voltage Vds	150V
	Series	OptiMOS 3
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	11.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	41nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	214W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.36mm
	Height	15.95mm
	Width	4.57mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 83A
	Maximum Drain Source Voltage Vds 150V
	Series OptiMOS 3
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 11.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 41nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 214W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.36mm
	Height 15.95mm
	Width 4.57mm
	Automotive Standard No

Pays d'origine :: CN

Infineon OptiMOS™ 3 Series MOSFET, 83A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IPP111N15N3GXKSA1

This MOSFET is suitable for high-efficiency switching applications, significantly enhancing system efficiency and performance across various industries including automation and electronics. Its features, including a high continuous drain current and broad operating temperature range, make it adaptable for various environments.

Features & Benefits

• N-channel design for effective switching capabilities

• Low on-resistance which reduces power loss

• High power dissipation capacity for consistent operation

• Effectively handles both pulsed and continuous currents

• Through-hole mounting design for easy installation

Applications

• Ideal for synchronous rectification in power supplies

• Applicable in high-frequency switching for enhanced efficiency

• Suitable for automotive and industrial automation systems

• Utilised in energy conversion systems like converters and inverters

• Employed in power management for renewable energy technologies

Can this be used in industrial automation systems?

Yes, it is suitable for automated systems due to its efficiency and dependable performance.

What are the benefits of using this component in power supplies?

It features low on-resistance and high drain current, minimising power losses and improving thermal management in power supply designs.

How does this perform under extreme temperatures?

This component operates reliably within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.

Is it compatible with existing designs in my application?

Yes, its TO-220 package type and through-hole mounting style are compatible with many established circuit designs.

What should I consider for proper installation?

Ensure proper thermal management and adequate space for heat dissipation to maintain optimal performance during operation.