Infineon OptiMOS 3 Type N-Channel MOSFET, 37 A, 150 V Enhancement, 3-Pin TO-220 IPA105N15N3GXKSA1
- N° de stock RS:
- 906-2956
- Référence fabricant:
- IPA105N15N3GXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 4 unités)*
19,172 €
(TVA exclue)
23,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 296 unité(s) expédiée(s) à partir du 31 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 4 - 16 | 4,793 € | 19,17 € |
| 20 - 36 | 4,553 € | 18,21 € |
| 40 - 96 | 4,363 € | 17,45 € |
| 100 - 196 | 4,168 € | 16,67 € |
| 200 + | 3,88 € | 15,52 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 906-2956
- Référence fabricant:
- IPA105N15N3GXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.15mm | |
| Standards/Approvals | No | |
| Length | 10.65mm | |
| Width | 4.85 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-433 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 16.15mm | ||
Standards/Approvals No | ||
Length 10.65mm | ||
Width 4.85 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-433 | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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