Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263 IPB60R360P7ATMA1
- N° de stock RS:
- 214-4372
- Référence fabricant:
- IPB60R360P7ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
11,83 €
(TVA exclue)
14,31 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,183 € | 11,83 € |
| 50 - 90 | 1,124 € | 11,24 € |
| 100 - 240 | 1,10 € | 11,00 € |
| 250 - 490 | 1,03 € | 10,30 € |
| 500 + | 0,958 € | 9,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-4372
- Référence fabricant:
- IPB60R360P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.5mm | |
| Standards/Approvals | No | |
| Length | 10.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Operating Temperature 150°C | ||
Height 4.5mm | ||
Standards/Approvals No | ||
Length 10.02mm | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 9A Continuous Drain Current - IPB60R360P7ATMA1
This MOSFET is a high-voltage N-channel device designed for switching and power-conversion roles in industrial power systems. It is supplied in a TO-263 surface-mount package and is intended for applications that require robust gate control and significant drain current handling within elevated temperature ranges.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching capability
• 9A continuous drain current supports substantial load currents
• 360mΩ Rds(on) reduces conduction losses under load
• 41W maximum power dissipation manages thermal stress during operation
• 13nC typical gate charge allows efficient gate-driving transitions
• 20V maximum gate-source tolerance permits common gate-drive voltages
• 9A continuous drain current supports substantial load currents
• 360mΩ Rds(on) reduces conduction losses under load
• 41W maximum power dissipation manages thermal stress during operation
• 13nC typical gate charge allows efficient gate-driving transitions
• 20V maximum gate-source tolerance permits common gate-drive voltages
Applications
• Used for high-voltage power-supply switching stages
• Suitable for industrial AC/DC conversion modules
• Ideal for secondary-side synchronous rectification implementations
• Can be used for high-voltage motor-drive auxiliary circuits
• Used with surface-mount assemblies requiring three-terminal power devices
• Suitable for industrial AC/DC conversion modules
• Ideal for secondary-side synchronous rectification implementations
• Can be used for high-voltage motor-drive auxiliary circuits
• Used with surface-mount assemblies requiring three-terminal power devices
What temperature extremes can it tolerate during operation?
It operates across a range from -55°C up to 150°C enabling use in harsh thermal environments.
Which package and mounting method does it use for board integration?
It is supplied in a TO-263 package designed for surface mounting to facilitate thermal contact and automated assembly.
How does the device handle gate-drive requirements for fast switching?
With a typical gate charge of 13nC and a 20V gate-source limit, it supports brisk switching while using common gate-driver voltages.
What polarity and control mode does the transistor employ?
It is an N-type enhancement-mode device suitable for low-side and high-side switching topologies.
Liens connexes
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