Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

N° de stock RS:: 214-4369
Référence fabricant:: IPB60R280P7ATMA1
Fabricant:: Infineon

Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

Sous-total (1 bobine de 1000 unités)*

757,00 €

(TVA exclue)

916,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 12 octobre 2026

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Unité	Prix par unité	la bobine*
1000 +	0,757 €	757,00 €

*Prix donné à titre indicatif

N° de stock RS:: 214-4369
Référence fabricant:: IPB60R280P7ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	600V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Power Dissipation Pd	53W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	10.02mm
	Standards/Approvals	No
	Height	4.5mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series 600V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Power Dissipation Pd 53W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 10.02mm
	Standards/Approvals No
	Height 4.5mm
	Automotive Standard No

Datasheet - IPB60R280P7ATMA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 12A Continuous Drain Current - IPB60R280P7ATMA1

This MOSFET is a high-voltage N-channel enhancement device engineered for power switching in demanding electronic systems. It operates across a wide temperature range and is intended for surface-mounted applications where robust voltage handling and controlled gate drive are required. The component suits designs that require high-voltage blocking, moderate conduction current and compact mounting.

Features and Benefits:

• 600V drain-source rating for high-voltage switching capability
• 12A continuous drain current for sustained load handling
• 280 mΩ Rds(on) for efficient conduction at normal operating conditions
• 18 nC typical gate charge for predictable switching energy
• 53W maximum power dissipation for thermal margin in power stages
• 20V gate tolerance for compatibility with common gate drivers

Applications

• Suitable for offline power supplies and SMPS primary switches
• Ideal for high-voltage DC-DC converters and power modules
• Used with rectifier and snubber networks in power conditioning
• Can be used for industrial motor-drive front-ends
• Used for telecoms power systems requiring space-efficient mounting

What package and mounting approach does it require?

It is supplied in a TO-263 package designed for surface-mount assembly to provide low-profile board integration and efficient board-level thermal conduction.

What thermal limits govern its use in high-temperature environments?

The device is rated to operate between -55 °C and 150 °C, defining allowable ambient and junction conditions for reliable operation within that span.

How does the gate specification influence external driver selection?

With a maximum gate-source voltage of 20V, drivers should keep peak Vgs within this boundary and account for the 18 nC typical gate charge when sizing drive current for the desired switching speed.

What conduction behaviour should designers anticipate under continuous load?

Expect continuous drain currents up to 12 A, with conduction losses influenced by the specified 280 mΩ on-resistance and overall board thermal design.