Vishay E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 210-4993
- Référence fabricant:
- SIHP17N80AE-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
89,25 €
(TVA exclue)
108,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 650 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,785 € | 89,25 € |
| 100 - 200 | 1,678 € | 83,90 € |
| 250 - 450 | 1,517 € | 75,85 € |
| 500 - 1200 | 1,428 € | 71,40 € |
| 1250 + | 1,339 € | 66,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 210-4993
- Référence fabricant:
- SIHP17N80AE-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.69mm | |
| Height | 4.24mm | |
| Width | 9.96 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 14.69mm | ||
Height 4.24mm | ||
Width 9.96 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has TO-220AB package type with 15 A drain current.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Liens connexes
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP17N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP15N80AE-GE3
- Vishay E-Series N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB17N80AE-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220AB SiHP17N80AEF-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-247AC SIHG17N80AE-GE3
- Vishay N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- Vishay EF-Series N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP15N80AEF-GE3
