Vishay E Type N-Channel Power MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
- N° de stock RS:
- 188-4982
- Numéro d'article Distrelec:
- 304-38-847
- Référence fabricant:
- SIHD2N80AE-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
8,33 €
(TVA exclue)
10,08 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Stock limité
- 1 400 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,833 € | 8,33 € |
| 100 - 240 | 0,751 € | 7,51 € |
| 250 - 490 | 0,708 € | 7,08 € |
| 500 - 990 | 0,542 € | 5,42 € |
| 1000 + | 0,505 € | 5,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-4982
- Numéro d'article Distrelec:
- 304-38-847
- Référence fabricant:
- SIHD2N80AE-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Standards/Approvals | RoHS | |
| Height | 2.25mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 62.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22mm | ||
Standards/Approvals RoHS | ||
Height 2.25mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 2.9A Maximum Continuous Drain Current - SIHD2N80AE-GE3
This power MOSFET is a high-voltage switching transistor intended for use in industrial and electronics systems where robust voltage handling and thermal endurance are required. It operates as an enhancement-mode N-channel device designed for surface-mount installation and is suited to power conversion and control tasks in automation and electrical equipment.
Features and Benefits:
• 800V rating enables high-voltage switching in Compact designs • 2.9A continuous drain current supports moderate load currents • 7nC typical gate charge for efficient gate-drive energy management • 2.9Ω Rds(on) limits conduction losses under light-to-moderate loads • 62.5W power dissipation allows sustained thermal loading • -55°C to 150°C operating range for elevated-temperature applications
Applications
• Suitable for high-voltage rail switching in industrial converters • Ideal for power-stage use in motor drives with moderate currents • Used for line-side switching in power supplies and inverters • Can be used for transient suppression and snubber circuits in AC systems
What gate voltage range should I observe for control circuitry?
The device tolerates gate-source voltages up to 30V, so gate drivers should be specified to remain within this maximum to prevent gate degradation.
How does mounting affect thermal performance?
As a surface-mounted TO-252 package, thermal transfer relies on good PCB copper area and thermal vias to dissipate the device’s rated power
insufficient copper will raise junction temperature.
What package pin count and configuration are provided?
The component is supplied in a three-pin TO-252 configuration suitable for standard surface-mount assembly processes.
How should I account for forward conduction behaviour in design?
The reported forward voltage is 1.2V
include this in loss calculations when the body diode conducts during reverse-recovery or synchronous-rectification events.
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