Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

N° de stock RS:: 210-4963
Référence fabricant:: SiHA186N60EF-GE3
Fabricant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

Sous-total (1 paquet de 5 unités)*

7,10 €

(TVA exclue)

8,60 €

(TVA incluse)

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Unité	Prix par unité	le paquet*
5 +	1,42 €	7,10 €

*Prix donné à titre indicatif

N° de stock RS:: 210-4963
Référence fabricant:: SiHA186N60EF-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	8.4A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	168mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	33W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	9.7mm
	Standards/Approvals	RoHS
	Height	4.3mm
	Length	28.1mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 8.4A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 168mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 33W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 9.7mm
	Standards/Approvals RoHS
	Height 4.3mm
	Length 28.1mm
	Automotive Standard No

Datasheet - SiHA186N60EF-GE3

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 8.4A Maximum Continuous Drain Current - SiHA186N60EF-GE3

This power MOSFET is a high-voltage N-channel switching device designed for industrial power control and conversion. It functions as an enhancement-mode transistor for use in through-hole assemblies and is suited to applications requiring sustained operation across a wide temperature range.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 8.4 A continuous drain current supports moderate load currents • 168 mΩ Rds(on) reduces conduction losses under load • 21 nC typical gate charge minimises drive energy requirements • 33W power dissipation allows steady-state thermal handling • 150 °C maximum operating temperature endures harsh thermal conditions

Applications

• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive gate stages • Used for mains-frequency inverter output stages • Can be used for power factor correction circuitry • Used with discrete power assemblies requiring through-hole mounting

What gate voltage range is safe for switching control?

The device accepts up to 30V between gate and source, so driver stages should be limited within this range to avoid gate overstress.

How does the package choice affect mounting and heat management?

The TO-220 through-hole package facilitates bolt‑down heatsinking and straightforward PCB mounting for effective thermal coupling.

What extremes of ambient temperature can it withstand?

It operates from -55 °C up to 150 °C, allowing use in environments with wide thermal excursions.

What should be considered when designing for continuous current?

Account for 8.4 A continuous drain current and 33W dissipation by specifying adequate heatsinking and a thermal path to maintain safe junction temperatures.

How does gate charge influence driver selection?

A typical gate charge of 21 nC helps determine driver current and switching speed requirements to achieve desired rise and fall times.