Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3
- N° de stock RS:
- 210-4962
- Référence fabricant:
- SiHA186N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
117,00 €
(TVA exclue)
141,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,34 € | 117,00 € |
| 100 - 200 | 2,20 € | 110,00 € |
| 250 - 450 | 1,989 € | 99,45 € |
| 500 + | 1,872 € | 93,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 210-4962
- Référence fabricant:
- SiHA186N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 168mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.7mm | |
| Length | 28.1mm | |
| Height | 4.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 168mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Operating Temperature 150°C | ||
Width 9.7mm | ||
Length 28.1mm | ||
Height 4.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 33W Maximum Power Dissipation - SiHA186N60EF-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switched power applications where robust drain-to-source performance and compact through-hole mounting are required. It operates across a wide temperature span and is suited to designs requiring a 600V blocking capability, driven from standard gate voltages and mounted on conventional heatsinking arrangements.
Features and Benefits:
• 600V rating enables high-voltage switching in power stages
• 8.4A continuous drain current supports moderate load currents
• 168 mΩ Rds(on) reduces conduction losses at operational currents
• 33W power dissipation allows sustained thermal loading with heatsink
• 21 nC typical gate charge gives predictable switching energy demand
• 30V maximum gate drive permits common gate drive voltages
• 8.4A continuous drain current supports moderate load currents
• 168 mΩ Rds(on) reduces conduction losses at operational currents
• 33W power dissipation allows sustained thermal loading with heatsink
• 21 nC typical gate charge gives predictable switching energy demand
• 30V maximum gate drive permits common gate drive voltages
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable-energy inverters
• Can be used for lighting ballast and lamp-control circuits
• Suitable for laboratory and prototyping through-hole assemblies
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable-energy inverters
• Can be used for lighting ballast and lamp-control circuits
• Suitable for laboratory and prototyping through-hole assemblies
What gate voltage range should I design for in control circuitry?
Keep gate drive within a ±30V limit relative to source, with typical switching driven by gate voltages up to 30V to ensure safe operation.
How does thermal management affect continuous current capability?
Continuous drain current depends on thermal resistance to ambient
using a heatsink to keep junction temperature below 150 °C maintains the rated 8.4A capability.
Is this device suitable for automotive systems requiring specific approvals?
It does not carry automotive-grade approvals, so it should not be specified where automotive-certified components are mandatory.
What switching considerations arise from the gate charge value?
The 21 nC gate charge defines the required driver current and switching transition times
plan driver sizing to balance switching losses and transition speed.
Liens connexes
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