Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 210-4962
- Référence fabricant:
- SiHA186N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
117,00 €
(TVA exclue)
141,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,34 € | 117,00 € |
| 100 - 200 | 2,20 € | 110,00 € |
| 250 - 450 | 1,989 € | 99,45 € |
| 500 + | 1,872 € | 93,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 210-4962
- Référence fabricant:
- SiHA186N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 168mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.1mm | |
| Standards/Approvals | RoHS | |
| Width | 9.7mm | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 168mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Operating Temperature 150°C | ||
Length 28.1mm | ||
Standards/Approvals RoHS | ||
Width 9.7mm | ||
Height 4.3mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 8.4A Maximum Continuous Drain Current - SiHA186N60EF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for industrial power control and conversion. It functions as an enhancement-mode transistor for use in through-hole assemblies and is suited to applications requiring sustained operation across a wide temperature range.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 8.4 A continuous drain current supports moderate load currents • 168 mΩ Rds(on) reduces conduction losses under load • 21 nC typical gate charge minimises drive energy requirements • 33W power dissipation allows steady-state thermal handling • 150 °C maximum operating temperature endures harsh thermal conditions
Applications
• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive gate stages • Used for mains-frequency inverter output stages • Can be used for power factor correction circuitry • Used with discrete power assemblies requiring through-hole mounting
What gate voltage range is safe for switching control?
The device accepts up to 30V between gate and source, so driver stages should be limited within this range to avoid gate overstress.
How does the package choice affect mounting and heat management?
The TO-220 through-hole package facilitates bolt‑down heatsinking and straightforward PCB mounting for effective thermal coupling.
What extremes of ambient temperature can it withstand?
It operates from -55 °C up to 150 °C, allowing use in environments with wide thermal excursions.
What should be considered when designing for continuous current?
Account for 8.4 A continuous drain current and 33W dissipation by specifying adequate heatsinking and a thermal path to maintain safe junction temperatures.
How does gate charge influence driver selection?
A typical gate charge of 21 nC helps determine driver current and switching speed requirements to achieve desired rise and fall times.
Liens connexes
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SiHB186N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHA22N60EF-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220