Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3

N° de stock RS:: 204-7228
Référence fabricant:: SIHU5N80AE-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3

Sous-total (1 bobine de 3000 unités)*

1 401,00 €

(TVA exclue)

1 695,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 15 janvier 2027

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Unité	Prix par unité	la bobine*
3000 +	0,467 €	1 401,00 €

*Prix donné à titre indicatif

N° de stock RS:: 204-7228
Référence fabricant:: SIHU5N80AE-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	800V
	Package Type	IPAK
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	16.5nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	62.5W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	2.39mm
	Standards/Approvals	RoHS
	Height	6.22mm
	Length	6.73mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 800V
	Package Type IPAK
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 16.5nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 62.5W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 2.39mm
	Standards/Approvals RoHS
	Height 6.22mm
	Length 6.73mm
	Automotive Standard No

Datasheet - SIHU5N80AE-GE3

Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 62.5W Maximum Power Dissipation - SIHU5N80AE-GE3

This power MOSFET is a high-voltage switching device designed for demanding industrial power-conversion and control roles. It operates as an N-channel enhancement-mode transistor and is intended for through-hole PCB mounting in an IPAK package. The component supports elevated-temperature environments and provides a clear gate drive range for robust switching behaviour in power systems.

Features and Benefits:

• 800V drain-to-source rating enables high-voltage switching applications
• 4.4A continuous drain current supports sustained load conduction
• 1.35Ω low Rds(on) reduces conduction losses under load
• 16.5nC typical gate charge permits efficient gate-drive design
• 62.5W maximum power dissipation allows significant heat handling
• 30V maximum gate-source voltage secures gate insulation margin

Applications

• Suitable for high-voltage SMPS primary switching duties
• Ideal for industrial motor-drive inverter front-ends
• Used with boost converters in power-factor circuits
• Can be used for high-voltage relay replacement designs
• Employed in energy-management and power-supply protection

What temperature extremes can it tolerate during operation?

It is rated to function across a range from -55°C to 150°C, permitting use in environments with large thermal variation.

What package and mounting style does it use for PCB assembly?

The device is supplied in an IPAK form and is intended for through-hole mounting to aid thermal conduction to heatsinks.

What forward-voltage characteristic affects conduction at moderate currents?

The component exhibits a forward voltage of 1.2V which is relevant when assessing body-diode conduction and reverse-recovery losses.

Is the product suitable for applications with RoHS requirements?

It conforms to RoHS standards, allowing deployment where restricted-substance compliance is necessary.