Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK

N° de stock RS:: 204-7228
Référence fabricant:: SIHU5N80AE-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK

Sous-total (1 bobine de 3000 unités)*

1 401,00 €

(TVA exclue)

1 695,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 04 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,467 €	1 401,00 €

*Prix donné à titre indicatif

N° de stock RS:: 204-7228
Référence fabricant:: SIHU5N80AE-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	800V
	Package Type	IPAK
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Typical Gate Charge Qg @ Vgs	16.5nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	2.39mm
	Length	6.73mm
	Standards/Approvals	RoHS
	Height	6.22mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 800V
	Package Type IPAK
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Typical Gate Charge Qg @ Vgs 16.5nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 2.39mm
	Length 6.73mm
	Standards/Approvals RoHS
	Height 6.22mm
	Automotive Standard No

Datasheet - SIHU5N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SIHU5N80AE-GE3

This power MOSFET is a high-voltage N-channel enhancement-mode device designed for switching and power conversion in industrial and electronic systems. It is supplied in a through-hole IPAK package intended for robust board mounting and straightforward installation in control and power assemblies. The device is appropriate where elevated drain-to-source voltage capability and moderate current handling are required.

Features and Benefits:

• 800V Vds rating enabling high-voltage switching applications • 4.4A continuous drain current for moderate load delivery • 1.35Ω Rds(on) minimises conduction losses under load • 62.5W power dissipation supports sustained thermal loading • 16.5nC typical gate charge for predictable switching control • 150°C maximum operating temperature for high-temperature environments

Applications

• Suitable for high-voltage power supplies and converters • Ideal for industrial motor drive front-ends • Used for mains-side switching in lighting controls • Can be used for snubber or clamp circuits in power modules • Suitable for prototyping and repair in through-hole assemblies

What gate voltage range should I apply for safe operation?

The device accepts up to 30V between gate and source

designs typically use gate drive levels compatible with that maximum to avoid gate overstress.

How does the gate charge affect driver selection?

A 16.5nC gate charge at the rated gate drive determines required driver current and switching losses

choose a driver capable of sourcing sufficient Peak current for desired switching speed.

What environmental temperatures can it withstand during operation?

It is specified to operate down to -55°C and up to 150°C, so thermal management and junction-to-ambient considerations remain important at elevated temperatures.

Which mounting style does it require on the PCB?

It is a through-hole component in an IPAK body, so designs must include appropriate drill holes and solder pads for mechanical stability and heat transfer.