Vishay E N-Channel Power MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220AB SIHP690N60E-GE3
- N° de stock RS:
- 200-6820
- Référence fabricant:
- SIHP690N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 50 unités)*
55,55 €
(TVA exclue)
67,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 26 février 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 50 - 50 | 1,111 € | 55,55 € |
| 100 - 200 | 1,044 € | 52,20 € |
| 250 + | 0,944 € | 47,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 200-6820
- Référence fabricant:
- SIHP690N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 6.4A Maximum Continuous Drain Current - SIHP690N60E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion tasks in industrial electronic systems. It operates across a wide temperature span and is supplied in a through-hole TO-220AB package suitable for conventional heatsinking and manual assembly contexts.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching capability
• 6.4A continuous drain current supports moderate load currents
• 700mΩ Rds(on) minimises conduction losses under load
• 62.5W power dissipation allows substantial thermal handling
• 12nC gate charge reduces driving energy for faster switching
• 30V gate-source tolerance permits flexible gate drive levels
• 6.4A continuous drain current supports moderate load currents
• 700mΩ Rds(on) minimises conduction losses under load
• 62.5W power dissipation allows substantial thermal handling
• 12nC gate charge reduces driving energy for faster switching
• 30V gate-source tolerance permits flexible gate drive levels
Applications
• Suitable for offline power supplies and high-voltage converters
• Ideal for motor-drive gate stage and inverter switching
• Used with discrete switch-mode power supplies in industrial equipment
• Can be used for lab prototypes requiring through-hole mounting
• Appropriate for driver stages in high-voltage lighting control
• Ideal for motor-drive gate stage and inverter switching
• Used with discrete switch-mode power supplies in industrial equipment
• Can be used for lab prototypes requiring through-hole mounting
• Appropriate for driver stages in high-voltage lighting control
What temperature range can it tolerate in demanding installations?
It is specified to operate from -55°C up to 150°C, accommodating harsh industrial environments.
What mounting and cooling options are compatible with it?
The TO-220AB through-hole format permits direct PCB mounting and attachment to conventional heatsinks for enhanced thermal management.
How does its gate charge affect driver selection?
With a typical gate charge of 12nC, it requires moderate gate-drive capability, enabling use with compact drivers while maintaining reasonable switching speeds.
Is it suitable for automotive-grade applications?
It is not specified to meet automotive standards, so it is more appropriate for general industrial and commercial electronic designs.
Liens connexes
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