Vishay EF N-Channel Power MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3
- N° de stock RS:
- 200-6819
- Référence fabricant:
- SIHP186N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
26,76 €
(TVA exclue)
32,38 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 940 unité(s) expédiée(s) à partir du 30 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 10 | 2,676 € | 26,76 € |
| 20 - 40 | 2,515 € | 25,15 € |
| 50 - 90 | 2,275 € | 22,75 € |
| 100 - 240 | 2,141 € | 21,41 € |
| 250 + | 2,008 € | 20,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 200-6819
- Référence fabricant:
- SIHP186N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 193mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.65mm | |
| Length | 10.52mm | |
| Standards/Approvals | RoHS | |
| Height | 14.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 193mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.65mm | ||
Length 10.52mm | ||
Standards/Approvals RoHS | ||
Height 14.4mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 18A Continuous Drain Current - SIHP186N60EF-GE3
This power MOSFET is a high-voltage, enhancement-mode N-channel transistor designed for switching and power conversion tasks in through-hole assemblies. It operates across a broad temperature span and is constructed to meet RoHS environmental restrictions, making it suitable for demanding thermal and regulatory contexts where a robust 650V switching device is required.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching
• 18A continuous current supports significant load handling
• 193mΩ Rds(on) reduces conduction losses during operation
• 156W power dissipation allows sustained power handling
• 32nC gate charge facilitates efficient switching control
• 30V gate tolerance permits compatibility with common drivers
• 18A continuous current supports significant load handling
• 193mΩ Rds(on) reduces conduction losses during operation
• 156W power dissipation allows sustained power handling
• 32nC gate charge facilitates efficient switching control
• 30V gate tolerance permits compatibility with common drivers
Applications
• Ideal for high-voltage DC-DC converters in power supplies
• Suitable for industrial motor drive switching stages
• Used with inverter front-end circuits requiring 650V devices
• Can be used for solid-state relays handling medium currents
• Suitable for power factor correction and EMI-prone systems
• Suitable for industrial motor drive switching stages
• Used with inverter front-end circuits requiring 650V devices
• Can be used for solid-state relays handling medium currents
• Suitable for power factor correction and EMI-prone systems
What packaging and mounting approach does it require?
It is supplied in a TO-220AB package configured for through-hole mounting, allowing straightforward heatsinking and panel attachment.
How does it behave across extreme temperatures?
The device is specified to operate from -55°C up to 150°C, permitting use in environments with wide thermal variation without derating the specified voltage class.
What gate driving considerations are necessary?
The maximum gate-source rating is 30V and the typical total gate charge is 32nC, so gate drivers should provide sufficient peak current for targeted switching speeds while not exceeding 30V.
Is it suitable for automotive electronics?
It is not classified to automotive standards
selection should consider industry-specific qualification where vehicle-grade approval is required.
Liens connexes
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