Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212
- N° de stock RS:
- 188-5025
- Référence fabricant:
- SiSF20DN-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
11,99 €
(TVA exclue)
14,51 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,398 € | 11,99 € |
| 50 - 120 | 2,156 € | 10,78 € |
| 125 - 245 | 1,798 € | 8,99 € |
| 250 - 495 | 1,432 € | 7,16 € |
| 500 + | 1,202 € | 6,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-5025
- Référence fabricant:
- SiSF20DN-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 69.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Common Drain | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 69.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Common Drain | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
Liens connexes
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