onsemi Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 NVHL027N65S3F
- N° de stock RS:
- 186-1497
- Référence fabricant:
- NVHL027N65S3F
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
20,82 €
(TVA exclue)
25,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 26 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 20,82 € |
| 10 - 99 | 17,94 € |
| 100 + | 15,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-1497
- Référence fabricant:
- NVHL027N65S3F
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 595W | |
| Typical Gate Charge Qg @ Vgs | 227nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.82mm | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 595W | ||
Typical Gate Charge Qg @ Vgs 227nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.82mm | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
Non conforme
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
PPAP Capable
Typ. RDS(on) = 27.4 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
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