onsemi Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 NVHL040N65S3F

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Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
Options de conditionnement :
N° de stock RS:
186-1516
Référence fabricant:
NVHL040N65S3F
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

153nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

446W

Maximum Operating Temperature

150°C

Width

4.82 mm

Standards/Approvals

No

Length

15.87mm

Height

20.82mm

Automotive Standard

AEC-Q101

Non conforme

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 158 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)

PPAP Capable

Typ. RDS(on) = 32 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

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