onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NTHL110N65S3F
- N° de stock RS:
- 178-4486
- Référence fabricant:
- NTHL110N65S3F
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
9,93 €
(TVA exclue)
12,016 €
(TVA incluse)
Ajouter 16 unités pour bénéficier d'une livraison gratuite
En stock
- Plus 408 unité(s) expédiée(s) à partir du 17 février 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 4,965 € | 9,93 € |
| 20 + | 4,275 € | 8,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4486
- Référence fabricant:
- NTHL110N65S3F
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTHL | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTHL | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features:
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 98 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar / UPS
Liens connexes
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247