Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SQ2337ES-T1_GE3
- N° de stock RS:
- 180-8076
- Référence fabricant:
- SQ2337ES-T1_GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
12,02 €
(TVA exclue)
14,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 2 240 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,601 € | 12,02 € |
| 200 - 480 | 0,458 € | 9,16 € |
| 500 - 980 | 0,361 € | 7,22 € |
| 1000 - 1980 | 0,301 € | 6,02 € |
| 2000 + | 0,271 € | 5,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8076
- Référence fabricant:
- SQ2337ES-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 314mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Width | 2.64 mm | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 314mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Width 2.64 mm | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 290mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2.2A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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