Vishay TrenchFET Type P-Channel MOSFET, 4.1 A, 40 V Enhancement, 3-Pin SOT-23 SQ2389ES-T1_GE3

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N° de stock RS:
180-8138
Référence fabricant:
SQ2389ES-T1_GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

188mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3W

Typical Gate Charge Qg @ Vgs

8.2nC

Maximum Operating Temperature

175°C

Length

3.04mm

Standards/Approvals

No

Height

1.12mm

Width

2.64 mm

Automotive Standard

AEC-Q101

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 94mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 4.1A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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