Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
180-7399
Référence fabricant:
SQ2337ES-T1_GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

80V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

314mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11.5nC

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

3W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

1.12mm

Length

3.04mm

Standards/Approvals

No

Width

2.64 mm

Automotive Standard

AEC-Q101

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 290mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2.2A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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