Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3
- N° de stock RS:
- 180-7967
- Référence fabricant:
- SQD50P06-15L_GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
17,52 €
(TVA exclue)
21,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 115 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- 1 360 unité(s) finale(s) expédiée(s) à partir du 12 juin 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,504 € | 17,52 € |
| 50 - 120 | 2,978 € | 14,89 € |
| 125 - 245 | 2,698 € | 13,49 € |
| 250 - 495 | 2,176 € | 10,88 € |
| 500 + | 1,896 € | 9,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7967
- Référence fabricant:
- SQD50P06-15L_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Forward Voltage Vf | -1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Forward Voltage Vf -1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- TW
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• Package with low thermal resistance
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Liens connexes
- Vishay TrenchFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD50034E_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin TO-252
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 4-Pin TO-252
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin TO-252 SQD40061EL_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3
- Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23