Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252

Sous-total (1 bobine de 2000 unités)*

2 388,00 €

(TVA exclue)

2 890,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
2000 +1,194 €2 388,00 €

*Prix donné à titre indicatif

N° de stock RS:
180-7402
Numéro d'article Distrelec:
303-97-244
Référence fabricant:
SQD50P06-15L_GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.5V

Maximum Power Dissipation Pd

136W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

98nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.38mm

Length

10.41mm

Automotive Standard

AEC-Q101

Pays d'origine :
TW

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications


• Adaptor switch

• Load switches

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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