Vishay N-Channel MOSFET, 25 A, 150 V TO-252AA SUD25N15-52-E3
- N° de stock RS:
- 180-7416
- Référence fabricant:
- SUD25N15-52-E3
- Fabricant:
- Vishay
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 180-7416
- Référence fabricant:
- SUD25N15-52-E3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252AA | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.052Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Length | 6.22mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Width | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252AA | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.052Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Length 6.22mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Width 6.73mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 150V and maximum gate-source voltage of 20V. It has a drain-source resistance of 52mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 136W. It can be used in the primary side switch. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• PWM optimised
• TrenchFET power MOSFET
Liens connexes
- Vishay N-Channel MOSFET 150 V TO-252AA SUD25N15-52-E3
- Vishay N-Channel MOSFET 150 V PowerPAK 1212-8 SI7818DN-T1-E3
- Vishay N-Channel MOSFET 150 V, 3-Pin TO-252 SUD15N15-95-E3
- Vishay N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8 SI7898DP-T1-E3
- Vishay Si2325DS Type P-Channel MOSFET -150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
- Vishay N-Channel MOSFET 20 V TSSOP-8 SI6968BEDQ-T1-E3
- Vishay N-Channel MOSFET Transistor 90 V, 3-Pin TO-205AD 2N6661-E3
- Vishay Single E N-Channel MOSFET 600 V TO-220 SIHA22N60E-E3
