Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3

N° de stock RS:: 919-0275
Référence fabricant:: SI2325DS-T1-E3
Fabricant:: Vishay

Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3

Sous-total (1 bobine de 3000 unités)*

1 236,00 €

(TVA exclue)

1 497,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 12 novembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,412 €	1 236,00 €

*Prix donné à titre indicatif

N° de stock RS:: 919-0275
Référence fabricant:: SI2325DS-T1-E3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-530mA
	Maximum Drain Source Voltage Vds	-150V
	Series	Si2325DS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7.7nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	750mW
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	1.4mm
	Standards/Approvals	RoHS
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -530mA
	Maximum Drain Source Voltage Vds -150V
	Series Si2325DS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7.7nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 750mW
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 1.4mm
	Standards/Approvals RoHS
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Pays d'origine :: CN

Vishay Si2325DS Series MOSFET, 150V Maximum Drain Source Voltage, 750mW Maximum Power Dissipation - SI2325DS-T1-E3

This p-channel MOSFET is a surface-mount semiconductor designed for high-voltage switching in compact electronic assemblies. It operates as an enhancement-mode transistor suitable for low-power applications where controlled source-to-drain conduction and gate-driven switching are required. The device meets RoHS requirements and is specified for a broad temperature range, making it appropriate for varied electronic environments.

Features and Benefits:

• High voltage capability supports switching up to -150V
• Low on-resistance delivers 1.2Ω for efficient conduction
• Continuous drain current rating allows -530mA steady operation
• Limited power loss with 750mW maximum dissipation
• Small gate charge of 7.7nC enables faster gate transitions
• Wide operating temperature range spans -55°C to 150°C

Applications

• Suitable for high-voltage load switching in power rails
• Ideal for level-shift circuits requiring P-channel devices
• Used with battery protection and reverse-polarity circuits
• Suitable for compact surface-mount power-management boards
• Can be used for low-power MOSFET roles in signal switching

What package and mounting method does it use?

It is supplied in a SOT-23 package intended for surface mounting to save board space.

What gate voltage limits should be observed during design?

The gate-to-source voltage must not exceed 20V to avoid gate overstress.

How should thermal considerations be handled in PCB layouts?

With a 750mW dissipation limit, provide adequate copper area or thermal vias to spread heat and maintain temperature within the specified -55°C to 150°C range.

Is this component rated for automotive specification levels?

It is not classified as automotive-grade

designers should not assume automotive qualification.