Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 919-0275
Référence fabricant:: SI2325DS-T1-E3
Fabricant:: Vishay

Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23

Sous-total (1 bobine de 3000 unités)*

1 236,00 €

(TVA exclue)

1 497,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 21 septembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,412 €	1 236,00 €

*Prix donné à titre indicatif

N° de stock RS:: 919-0275
Référence fabricant:: SI2325DS-T1-E3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-530mA
	Maximum Drain Source Voltage Vds	-150V
	Series	Si2325DS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	750mW
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	7.7nC
	Maximum Operating Temperature	150°C
	Width	1.4mm
	Length	3.04mm
	Standards/Approvals	RoHS
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -530mA
	Maximum Drain Source Voltage Vds -150V
	Series Si2325DS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 750mW
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 7.7nC
	Maximum Operating Temperature 150°C
	Width 1.4mm
	Length 3.04mm
	Standards/Approvals RoHS
	Height 1.02mm
	Automotive Standard No

Pays d'origine :: CN

Vishay Si2325DS Series MOSFET, -150V Maximum Drain Source Voltage, 1.2Ω Maximum Drain Source Resistance - SI2325DS-T1-E3

This p-channel MOSFET is a surface-mount semiconductor device designed for high-voltage switching and control in Compact assemblies. It functions as an enhancement-mode transistor suitable for use where reverse-polarity or high-side switching is required, and is optimised for low-power dissipation in small form-factor SOT-23 packages. The device operates across a wide temperature range, making it appropriate for varied industrial electronic contexts.

Features and Benefits:

• Maximum drain-source voltage supports 150V applications • Drain-source resistance of 1.2Ω reduces conduction losses • Continuous drain current of -530mA permits modest load driving • Typical gate charge of 7.7nC enables Faster gate transitions • Power dissipation rating of 750mW limits thermal build-up • Gate-source voltage tolerance of 20V allows robust drive margins

Applications

• Suitable for high-voltage load switching in automation systems • Ideal for high-side switching in control and power modules • Used for reverse-polarity protection in electronic designs • Can be used for level-shifted gate-drive circuits • Suitable for Compact power-management boards in instrumentation

What are the thermal limits for reliable operation?

The device is specified to operate between -55°C and 150°C, allowing use across typical industrial temperature ranges.

How does the package influence board layout?

The SOT-23 surface-mount package with three pins and Compact footprint supports dense assembly and straightforward thermal via placement for heat management.

What electrical constraint should designers observe for gate driving?

Designers must restrict gate-source voltage within ±20V to avoid gate dielectric stress and ensure long-term reliability.

How should power dissipation considerations affect cooling strategy?

With a 750mW dissipation rating, designers should provide adequate copper area or heatsinking on the PCB to maintain junction temperatures under load.