Vishay Type N-Channel MOSFET, 4.8 A, 150 V, 8-Pin PowerPAK SO-8 SI7898DP-T1-E3
- N° de stock RS:
- 180-7862
- Référence fabricant:
- SI7898DP-T1-E3
- Fabricant:
- Vishay
Sous-total (1 paquet de 5 unités)*
2,64 €
(TVA exclue)
3,195 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 2 590 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 0,528 € | 2,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7862
- Référence fabricant:
- SI7898DP-T1-E3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Width | 5.26mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 6.25mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Width 5.26mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 85mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 4.8A. It has a minimum and a maximum driving voltage of 6V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free component
• New low thermal resistance PowerPAK package with small size and low 1.07mm profile
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET for fast switching
Applications
• DC/DC power supply primary side switches
• Industrial motor drives
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
Liens connexes
- Vishay Type N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8
- Vishay Type N-Channel MOSFET 200 V, 8-Pin PowerPAK SO-8 SI7464DP-T1-E3
- Vishay Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SI7465DP-T1-E3
- Vishay SI7489DP-T1-E3 8-Pin PowerPAK SO-8, Surface
- Vishay Type N-Channel MOSFET 200 V, 8-Pin PowerPAK SO-8
- Vishay Type N-Channel MOSFET 150 V PowerPAK 1212-8 SI7818DN-T1-E3
- Vishay Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SIR158DP-T1-RE3