MOSFET Vishay SI7898DP-T1-E3

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 85mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 4.8A. It has a minimum and a maximum driving voltage of 6V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free component
• New low thermal resistance PowerPAK package with small size and low 1.07mm profile
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET for fast switching

• DC/DC power supply primary side switches
• Industrial motor drives

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested