Vishay SQD P-Channel Single MOSFETs, 50 A, -60 V Enhancement Mode, 3-Pin TO-252 SQD50P06-15L_NE3
- N° de stock RS:
- 829-351
- Référence fabricant:
- SQD50P06-15L_NE3
- Fabricant:
- Vishay
Visuel non contractuel
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,29 €
(TVA exclue)
2,77 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,29 € |
| 10 - 99 | 1,45 € |
| 100 - 499 | 1,00 € |
| 500 - 999 | 0,79 € |
| 1000 + | 0,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-351
- Référence fabricant:
- SQD50P06-15L_NE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | TO-252 | |
| Series | SQD | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0155Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | -1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Length | 6.22mm | |
| Width | 6.73mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type TO-252 | ||
Series SQD | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0155Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf -1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Length 6.22mm | ||
Width 6.73mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- GB
The Vishay high-performance power MOSFET designed for automotive applications. This device ensures reliable operation under demanding conditions with robust performance characteristics.
TrenchFET technology enables efficient power management
Low thermal resistance package enhances heat dissipation
Fully tested for R and UIS ensures reliability
AEC-Q101 qualified for automotive safety standards
Liens connexes
- Vishay SQD P-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-252 SQD50P04-13L_NE3
- Vishay TrenchFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3
- ROHM RD3 Type P-Channel Single MOSFETs 3-Pin TO-252 RD3L03BBJHRBTL
- Vishay SQJ P-Channel Single MOSFETs -60 V Enhancement Mode, 8-Pin P SQJ457EP-T1_NE3
- ROHM RD3N03BAT Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3N03BATTL1
- ROHM RD3N045AT Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3N045ATTL1
- ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3E07BBJHRBTL
- ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3G04BBJHRBTL