onsemi NVMFS6H818N Type N-Channel MOSFET, 123 A, 80 V Enhancement, 5-Pin DFN NVMFS6H818NT1G
- N° de stock RS:
- 178-4464
- Référence fabricant:
- NVMFS6H818NT1G
- Fabricant:
- onsemi
Sous-total (1 paquet de 10 unités)*
14,21 €
(TVA exclue)
17,19 €
(TVA incluse)
Ajouter 60 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 1 470 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 1,421 € | 14,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4464
- Référence fabricant:
- NVMFS6H818NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NVMFS6H818N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NVMFS6H818N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H818NWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
DC/DC converter
Load Switch
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